TSMC to start using High-NA EUV lithography in 2030 — A10 or A11 technology prime candidates for use


TSMC discloses plans to use High-NA EUV lithography in 2030, 6×12-inch photomasks with new scanners in 2033.
Quelle: Originalartikel öffnen


TSMC discloses plans to use High-NA EUV lithography in 2030, 6×12-inch photomasks with new scanners in 2033.
Quelle: Originalartikel öffnen